WitrynaThe stable ferroelectricity of 2D α In 2 Se 3 is attributed to its unique re-bonding mechanism and the locking between polarizations in the OOP and IP directions, … Witrynavan der Waals layered α-In2Se3 has shown out-of-plane ferroelectricity down to the bilayer and monolayer thicknesses at room temperature that can be switched by an applied electric field. This work addresses the missing theoretical framework through …
Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In2Se3 …
WitrynaAfter the theoretical estimations on the presence of in-plane and out-of-plane ferroelectricity in ground-state α-phase In 2 Se 3, 5,6 such ferroelectric behaviour was also observed experimentally. 7–9 Owing to the interesting reversible polarization switching that can be enabled by applying an electric field, various applications such … Witryna4 kwi 2024 · In this study, we have demonstrated artificial synapses using a GaN-based MOS-HEMT integrated with an α-In2Se3 ferroelectric semiconductor. The van der Waals heterostructure of GaN/α-In2Se3 provides a potential to achieve high-frequency operation driven by a ferroelectrically coupled two-dimensional electron gas (2DEG). scuba mask reading inserts
RSC Advances期刊最新论文, 化学/材料, - X-MOL
Witryna1 lut 2024 · Recently, both experiment and theoretical studies [21], [22], [23] on In 2 Se 3 proved that the α phase presents ferroelectric properties with in- and out-of plane polarization, contrary to the β phase which is not ferroelectric. Witryna11 kwi 2024 · A stackable reservoir system is constructed based on ferroelectric α‐In2Se3 devices with voltage input and output, which is realized by dynamic voltage division between a ferro electric field‐effect transistor and a planar device and therefore allows the reservoirs to cascade, enabling multilayer RC. Expand WitrynaHere, we demonstrate ferroelectric tunnel junctions that use α-In2Se3 as the ferroelectric barrier, and MoS2 and Ti/Au as asymmetric contacts. The tunnelling … scuba mask and fins